| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2519 is an NPN silicon complementary transistor manufactured by NTE Electronics. Designed as a high voltage driver, it features a high breakdown voltage and large current capacity, making it suitable for demanding applications.
Key electrical characteristics include a collector-to-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 1.5A. The transistor also boasts a typical gain bandwidth product (fT) of 120MHz at 50mA.
This component is designed for applications such as color TV audio output, converters, and inverters. Its isolated package design facilitates easier integration into various electronic circuits.
The NTE2519 is available in a through-hole mounting package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) for the NTE2519 is 160V.
The NTE2519 has a continuous collector current (IC) rating of 1.5A.
The typical gain bandwidth product (fT) for the NTE2519 is 120MHz.
The operating junction temperature (TJ) for the NTE2519 is up to +150°C.
The NTE2519 transistor is designed for through-hole mounting.