| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Manufacturer Name |
The NTE2513 is an NPN silicon complementary transistor manufactured by NTE Electronics, designed for high current switching applications. It features a low collector emitter saturation voltage, high gain-bandwidth product, excellent linearity of hFE, and fast switching times.
Key electrical characteristics include a collector emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 8A. The device also boasts a DC current gain (hFE) ranging from 140 to 240 at 500mA and a gain-bandwidth product (fT) of 180MHz at 1A. The collector emitter saturation voltage (VCE(sat)) is typically 200mV at 4A.
This transistor is suitable for applications such as display drivers, high-speed inverters, and converters. Its robust specifications make it a reliable component for demanding electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
8A.
-55°C to +150°C.
140 to 240.
180MHz.
Typical 200mV, maximum 400mV.
20W.