LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request |
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The NTE2512 is a silicon complementary NPN transistor manufactured by NTE Electronics, Inc. It is designed for high-frequency applications, particularly in video output stages for HDTV and color TV chroma output. Key electrical characteristics include a high gain bandwidth product (fT) of 800MHz at 100mA collector current and 10V collector-emitter voltage. It also offers a low reverse transfer capacitance (Cre) of 2.9pF, contributing to excellent high-frequency response.
Absolute maximum ratings specify a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA, with a peak current of 1A. Power dissipation is rated at 1.2W at an ambient temperature of 25°C and 10W at a case temperature of 25°C. The operating junction temperature can reach up to 150°C.
This transistor is suitable for very high-definition CRT displays and wide-band amplifier designs. Its complementary PNP counterpart is the NTE2512. The component is designed for through-hole mounting.
| Qty | Low | High |
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| 1+ | $1.44 | $1.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gain bandwidth product (fT) of the NTE2512 is typically 800MHz when tested at 10V collector-emitter voltage and 100mA collector current.
The NTE2512 has a maximum collector-emitter voltage (VCEO) of 60V.
The continuous collector current (IC) rating for the NTE2512 is 500mA.
The typical reverse transfer capacitance (Cre) of the NTE2512 is 2.9pF when measured at 30V collector-base voltage and 1MHz frequency.
The NTE2512 is designed for very high-definition CRT displays, video output stages, color TV chroma output, and wide-band amplifiers.
