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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN Darlington transistor, part number NTE251 from NTE Electronics, is designed for robust performance in demanding applications. It offers a high collector-emitter breakdown voltage of 100V and can handle a continuous collector current of up to 20A. The device has a power dissipation rating of 160W, making it suitable for power switching and amplification circuits.
Packaged in a TO-3 (TO-204AA) case, the NTE251 is designed for through-hole mounting, facilitating integration into various electronic assemblies. Its Darlington configuration provides high current gain, with a minimum DC current gain (hFE) of 750 at 10A and 3V. The saturation voltage (Vce(sat)) is a maximum of 3V at 200mA and 20A.
The operating temperature range for this transistor is from -65°C to 200°C (TJ), ensuring reliable operation across a wide thermal spectrum. It is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE251 can handle a maximum continuous collector current of 20 A.
The collector-emitter breakdown voltage for the NTE251 is 100 V.
The NTE251 has a power dissipation rating of 160 W.
The minimum DC current gain (hFE) for the NTE251 is 750 at 10A and 3V.
The NTE251 operates within a temperature range of -65°C to 200°C (TJ).
The NTE251 is supplied in a TO-3 (TO-204AA) package.
The NTE251 transistor is mounted using the through-hole method.