| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The NTE Electronics NTE250 is a PNP Darlington transistor, categorized under Single Bipolar Transistors. It is designed for through-hole mounting and comes in a TO-204AA, TO-3 package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 16A. The device can dissipate up to 150W of power. Its Vce saturation is rated at a maximum of 4V at 80mA collector current, and it features a minimum DC current gain (hFE) of 1000 at 10A and 3V.
The operating temperature range for this transistor is from -55°C to 200°C (TJ). The current collector cutoff is a maximum of 3mA.
This component is suitable for applications requiring high current gain and voltage handling capabilities in a through-hole configuration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the NTE250 is 100V.
The maximum continuous collector current for the NTE250 is 16A.
The NTE250 transistor has a maximum power dissipation of 150W.
The NTE250 operates within a temperature range of -55°C to 200°C.
The NTE250 transistor is available in a TO-204AA, TO-3 package.
The NTE250 transistor is designed for through-hole mounting.