| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The NTE246 is a PNP - Darlington transistor manufactured by NTE Electronics, Inc. This component is designed for through-hole mounting and comes in a TO-204AA, TO-3 package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 80V and a maximum collector current of 10A. It offers a high DC current gain (hFE) of 1000 at 5A and 3V, with a Vce saturation of 4V at 50mA and 10A. The transistor can dissipate up to 150W of power.
Operating within a wide temperature range of -55°C to 200°C (TJ), the NTE246 is suitable for various applications requiring robust performance. Its RoHS3 compliant status and MSL 1 rating indicate standard handling and environmental considerations.
This transistor is ideal for applications demanding high current gain and voltage handling capabilities in a through-hole package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 200°C (TJ)
TO-204AA, TO-3
10 A
1000 @ 5A, 3V
150 W