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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power - Max | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE Electronics NTE245 is a single NPN Darlington bipolar junction transistor (BJT) designed for power applications. It features a maximum collector current of 10A and a collector-emitter breakdown voltage of 80V. The transistor exhibits a high DC current gain (hFE) of 1000 at 5A and 3V, with a Vce saturation of 4V at 50mA and 10A.
This component is rated for a maximum power dissipation of 150W and operates within a wide temperature range of -55°C to 200°C (TJ). It is mounted via a through-hole method and comes in a TO-204AA, TO-3 package.
The NTE245 is specified as RoHS3 Compliant, with an MSL of 1 Unlimited and REACH Unaffected status. Its robust specifications make it suitable for various power switching and amplification circuits where high current gain and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the NTE245 transistor is 10A.
The collector-emitter breakdown voltage of the NTE245 is 80V.
The minimum DC current gain (hFE) of the NTE245 at 5A, 3V is 1000.
The operating temperature range for the NTE245 is -55°C to 200°C (TJ).
The NTE245 transistor is supplied in a TO-204AA, TO-3 package.
The NTE245 transistor is mounted using the through-hole method.