| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The NTE Electronics NTE2429 is a PNP bipolar junction transistor suitable for various electronic applications. It features a collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 1A. The transistor has a maximum power dissipation of 1W and operates at a transition frequency of 100MHz.
Designed for surface mounting, the NTE2429 comes in a TO-243AA (SOT-89) package, facilitating integration into compact circuit designs. Its Vce saturation is rated at a maximum of 500mV at 50mA collector current and 500mA base current, with a minimum DC current gain (hFE) of 100 at 100mA collector current and 5V Vce. The operating temperature range extends up to 150°C (TJ).
This component is specified with RoHS3 compliance, MSL 1, and REACH unaffected status. Its surface mount capability and electrical characteristics make it a versatile choice for signal amplification and switching applications where space is a constraint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 80V.
The maximum continuous collector current is 1A.
The maximum power dissipation is 1W.
The operating temperature is up to 150°C (TJ).
The NTE2429 is available in a TO-243AA (SOT-89) package.
The NTE2429 is a surface mount device.