| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2426 is a silicon planar Darlington transistor from NTE Electronics, suitable for industrial switching applications such as print hammer, solenoid, relay, and lamp drivers. It is designed in an NPN configuration and operates as a Darlington switch.
Key electrical specifications include a Collector-Emitter Voltage (VCER) of 80V and a continuous Collector Current (IC) of 500mA. The device boasts a high DC Current Gain (hFE) of up to 2000 at 500mA and 10V. The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 1.3V at 500mA collector current and 0.5mA base current.
This transistor is packaged in a SOT-89 (TO-243AA) surface mount case, making it suitable for compact PCB designs. The operating junction temperature can reach up to 150°C, with a total power dissipation of 1W at 25°C ambient temperature. Thermal resistance from junction to ambient is 125K/W.
Absolute maximum ratings include a Collector-Base Voltage (VCBO) of 90V and an Emitter-Base Voltage (VEBO) of 5V. Peak collector current is rated at 1.5A, and base current at 100mA. Storage temperature ranges from -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCER) for the NTE2426 is 80V.
The maximum continuous collector current (IC) is 500mA.
The NTE2426 is supplied in a SOT-89 package, also known as TO-243AA.
The operating junction temperature (TJ) is a maximum of 150°C.
The DC Current Gain (hFE) is a minimum of 2000 at 500mA collector current and 10V collector-emitter voltage.
The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 1.3V at 500mA collector current and 0.5mA base current.