NTE2426 The NTE2426 is an NPN silicon Darlington transistor designed for industrial switching applications. It features a high current gain and is housed in a SOT-89 surface mount package.
Mfr Part #:

NTE2426

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE2426 is an NPN silicon Darlington transistor designed for industrial switching applications. It features a high current gain and is housed in a SOT-89 surface mount package.
✓ Total Stock: 2 pcs
$ Price Range: $0.99

NTE2426 Available from 1 distributor

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2 pcs
2 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

NTE2426 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NTE2426 Description

Short technical summary and product information.

The NTE2426 is a silicon planar Darlington transistor from NTE Electronics, suitable for industrial switching applications such as print hammer, solenoid, relay, and lamp drivers. It is designed in an NPN configuration and operates as a Darlington switch.

 

Key electrical specifications include a Collector-Emitter Voltage (VCER) of 80V and a continuous Collector Current (IC) of 500mA. The device boasts a high DC Current Gain (hFE) of up to 2000 at 500mA and 10V. The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 1.3V at 500mA collector current and 0.5mA base current.

 

This transistor is packaged in a SOT-89 (TO-243AA) surface mount case, making it suitable for compact PCB designs. The operating junction temperature can reach up to 150°C, with a total power dissipation of 1W at 25°C ambient temperature. Thermal resistance from junction to ambient is 125K/W.

 

Absolute maximum ratings include a Collector-Base Voltage (VCBO) of 90V and an Emitter-Base Voltage (VEBO) of 5V. Peak collector current is rated at 1.5A, and base current at 100mA. Storage temperature ranges from -65°C to +150°C.

NTE2426 Quick Information

Product Type: Transistor
Canonical Name: NPN Silicon Darlington Transistor
Subcategory: Single

NTE2426 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE2426 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE2426 Features

  • NPN Silicon Darlington transistor.
  • 80V Collector-Emitter Voltage.
  • 500mA Continuous Collector Current.
  • High DC Current Gain (hFE).
  • SOT-89 Surface Mount Package.

NTE2426 Applications

  • Designed for industrial switching.
  • Suitable for print hammer drivers.
  • Used for solenoid drivers.
  • Applicable for relay drivers.
  • Ideal for lamp drivers.

NTE2426 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the Collector-Emitter Voltage for the NTE2426?

The Collector-Emitter Voltage (VCER) for the NTE2426 is 80V.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is 500mA.

What is the package type for the NTE2426 transistor?

The NTE2426 is supplied in a SOT-89 package, also known as TO-243AA.

What is the operating junction temperature?

The operating junction temperature (TJ) is a maximum of 150°C.

What is the DC Current Gain (hFE) at 500mA and 10V?

The DC Current Gain (hFE) is a minimum of 2000 at 500mA collector current and 10V collector-emitter voltage.

What is the Collector-Emitter Saturation Voltage?

The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 1.3V at 500mA collector current and 0.5mA base current.

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