| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2419 from NTE Electronics is a PNP pre-biased bipolar junction transistor (BJT) suitable for various switching and interface applications. It features a collector-base voltage rating of 50V and a maximum collector current of 100mA.
This transistor includes two built-in 47kΩ bias resistors, simplifying circuit design. It operates with a power dissipation of 200mW and has a transition frequency of 200MHz. The device is housed in a compact SOT-23 surface mount package.
Key electrical characteristics include a collector-emitter saturation voltage of 300mV at 5mA collector current and a minimum DC current gain (hFE) of 50 at 10mA collector current. The NTE2419 is designed for applications such as switching circuits, inverters, and driver circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage rating for the NTE2419 transistor is 50V.
The NTE2419 transistor has a maximum collector current of 100mA.
The NTE2419 transistor is available in a SOT-23 surface mount package.
Yes, the NTE2419 features two built-in 47kΩ bias resistors.
The NTE2419 transistor has a power dissipation of 200mW.