| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2417 is a PNP silicon transistor designed for various switching and interface applications. It features integrated 22kΩ bias resistors, simplifying circuit design. This transistor offers a collector-emitter voltage of up to 50V and a continuous collector current of 100mA, with a power dissipation of 200mW.
Packaged in a small SOT-23 surface mount package, the NTE2417 is suitable for space-constrained designs. Its electrical characteristics include a minimum DC current gain (hFE) of 50 at 10mA and 5V, and a transition frequency (fT) of 200MHz. The device operates within a junction temperature range of -55°C to +150°C.
Key applications include switching circuits, inverters, interface circuits, and driver circuits. The built-in resistors simplify the biasing network, making it an efficient choice for digital applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating (VCEO) for the NTE2417 is 50V.
The NTE2417 can handle a continuous collector current of 100mA.
The NTE2417 has a power dissipation rating of 200mW.
The minimum DC current gain (hFE) for the NTE2417 is 50 at 10mA collector current and 5V VCE.
The transition frequency (fT) for the NTE2417 is 200MHz.
The NTE2417 is supplied in a SOT-23 package.