| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2416 is a pre-biased NPN silicon transistor manufactured by NTE Electronics. It is designed for various electronic applications requiring a reliable switching or amplification component.
Key electrical specifications include a collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 250MHz. The device features integrated base and emitter resistors, with values of 22 kOhms each, simplifying circuit design. Its Vce saturation is rated at a maximum of 300mV at 500µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 50 at 10mA and 5V.
The NTE2416 is housed in a TO-236-3, SC-59, SOT-23-3 package, making it suitable for surface-mount applications. The mounting type is surface mount, facilitating automated assembly processes. The maximum power dissipation is 200mW.
This transistor is RoHS non-compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under recommended storage conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum collector current is 100mA.
The transition frequency is 250MHz.
The NTE2416 is available in a TO-236-3, SC-59, SOT-23-3 package.
The NTE2416 is RoHS non-compliant.