| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Manufacturer Name | |
| Capacitance | |
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| SVHC Present | |
| Thermal Resistance |
The NTE2413 is a general-purpose Silicon PNP transistor designed for applications in telephone and professional communication equipment. It offers a high collector-emitter voltage rating of 300V and a continuous collector current of 50mA, with a peak current capability of 100mA.
This transistor is housed in a compact SOT-23 surface mount package, making it suitable for space-constrained designs. Key electrical characteristics include a DC current gain (hFE) of 50 minimum at 20V/25mA, a transition frequency (fT) of 60MHz minimum at 10V/10mA, and a collector-emitter saturation voltage (VCE(sat)) of 0.8V maximum at 30mA/5mA.
Thermal considerations include a total power dissipation of 310mW at 35°C ambient temperature and a junction-to-ambient thermal resistance of 60K/W. The operating junction temperature can reach up to 150°C, with a storage temperature range of -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300V.
SOT-23 surface mount.
150°C.
Minimum 50 at VCE=20V, IC=25mA.
Minimum 60MHz at VCE=10V, IE=10mA, f=35MHz.
Maximum 0.8V at IC=30mA, IB=5mA.
50mA.