| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2412 is a Silicon PNP transistor manufactured by NTE Electronics, Inc. It is designed for general-purpose applications and high voltage amplification, particularly in telephone and professional communication equipment.
Key electrical characteristics include a maximum Collector-Base Voltage (VCBO) and Collector-Emitter Voltage (VCER) of 300V. The continuous Collector Current (IC) is rated at 50mA, with a peak capability of 100mA. The DC Current Gain (hFE) is a minimum of 50 at VCE = 20V and IC = 25mA, and the transition frequency (fT) is a minimum of 60MHz at VCE = 10V and IE = 10mA.
This transistor is housed in a SOT-23 surface mount package. Thermal specifications include a Junction-to-Tab thermal resistance (RthJT) of 50K/W and a Soldering Points-to-Ambient thermal resistance (RthSA) of 60K/W when mounted on a ceramic substrate. The operating junction temperature can reach up to +150°C, with a storage temperature range of -65°C to +150°C.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are currently treated with low confidence due to lack of verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCER) for the NTE2412 transistor is 300V.
The NTE2412 has a continuous collector current rating of 50mA.
The minimum DC current gain (hFE) for the NTE2412 is 50, measured at VCE = 20V and IC = 25mA.
The NTE2412 transistor has a minimum transition frequency (fT) of 60MHz, tested at VCE = 10V and IE = 10mA.
The NTE2412 transistor is supplied in a SOT-23 surface mount package.
The operating junction temperature for the NTE2412 can reach up to +150°C.