| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Transistor Type |
The NTE Electronics NTE2411 is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained designs.
Key electrical characteristics include a collector-emitter breakdown voltage of 150V and a continuous collector current rating of 500mA. The transistor offers a minimum DC current gain (hFE) of 60 at 10mA and 5V, with a transition frequency of 300MHz. Its Vce saturation is a maximum of 1V at 5mA base current and 50mA collector current. The maximum power dissipation is rated at 225mW.
Operating within a temperature range of -55°C to 150°C, the NTE2411 is designed for reliability in diverse environmental conditions. The SOT-23 package facilitates efficient heat dissipation for its power rating and simplifies automated assembly processes.
This transistor is a component within the broader category of discrete semiconductor products, specifically falling under single bipolar transistors. Its specifications make it suitable for general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
TO-236-3, SC-59, SOT-23-3; supplier device package SOT-23.
-55°C to 150°C (junction temperature).
Minimum 60 at 10mA collector current and 5V Vce.
300MHz.
225mW.