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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This NTE241 is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics, Inc. It is designed for through-hole mounting and comes in a TO-220 package.
The transistor offers a collector-emitter breakdown voltage of 80V and can handle a maximum collector current of 4A. Its DC current gain (hFE) is a minimum of 20 at 1.5A and 2V. The device has a maximum power dissipation of 60W and a transition frequency of 2.5MHz.
Operating within a temperature range of -65°C to 150°C (TJ), the NTE241 is suitable for various electronic applications requiring robust switching or amplification capabilities. The Vce saturation is a maximum of 1.4V at 1A collector current and specified base current, and the collector cutoff current is a maximum of 1mA.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-65°C to 150°C (TJ)
NPN
4 A
80 V
60 W
TO-220-3