| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2407 is a Silicon PNP Transistor manufactured by NTE Electronics. This general-purpose transistor is suitable for amplification applications and comes in a surface-mount package.
Key electrical characteristics include a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 600mA. The device offers a DC current gain (hFE) ranging from 35 to 300 depending on the operating conditions. Saturation voltages are specified at 0.4V for VCE(sat) at 150mA and 1.6V at 500mA.
Absolute maximum ratings define the operational limits, with a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 60V, and an emitter-base voltage (VEBO) of 5V. The continuous collector current (IC) is limited to 600mA.
Thermal considerations include total device dissipation. On an FR-5 board, the dissipation is 225mW, derated above 25°C. On an alumina substrate, the dissipation is 300mW, also derated above 25°C. The operating and storage temperature range for the NTE2407 is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE2407 is 60V.
The NTE2407 has a continuous collector current (IC) rating of 600mA.
The DC current gain (hFE) of the NTE2407 at VCE=10V and IC=10mA is a minimum of 100.
The collector-emitter saturation voltage (VCE(sat)) at IC=150mA and IB=15mA is a maximum of 0.4V.
The operating junction temperature range for the NTE2407 is -55°C to +150°C.
The NTE2407 is available in a surface mount package.