| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This NTE2398 MOSFET from NTE Electronics is an N-Channel device with a maximum drain-source voltage of 500V and a continuous drain current of 4.5A at a case temperature (Tc).
It is constructed using MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 4V at 250µA. The on-state resistance (Rds On) is a maximum of 1.5 Ohms at 2.7A and 10V gate-source voltage. The maximum power dissipation is rated at 74W (Tc).
The device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a TO-220-3 case and features through-hole mounting.
Key electrical characteristics include an input capacitance (Ciss) of 610 pF at 25V and a gate charge (Qg) of 38 nC at 10V. The maximum gate-source voltage (Vgs) is ±20V, with a drive voltage of 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NTE2398 is 500V.
The NTE2398 has a continuous drain current of 4.5A.
The operating temperature range for the NTE2398 is -55°C to 150°C (TJ).
The NTE2398 is supplied in a TO-220-3 package.
The NTE2398 is designed for through-hole mounting.