| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTE2395 is a single N-Channel MOSFET manufactured by NTE Electronics. It is designed for through-hole mounting and comes in a TO-220 package. This MOSFET offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous current of 50A (Tc) with a maximum power dissipation of 150W (Tc).
Key electrical characteristics include a low on-resistance (Rds On) of 28mOhm at 31A and 10V, a gate charge (Qg) of 67nC at 10V, and an input capacitance (Ciss) of 1900pF at 25V. The threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V. The operating temperature range is -55°C to 175°C (TJ).
This component is suitable for various power switching and amplification applications where a robust N-Channel MOSFET is required. Its through-hole mounting type simplifies integration into circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTE2395 is 60 V.
The NTE2395 has a maximum continuous current rating of 50A at the case temperature (Tc).
The NTE2395 comes in a TO-220-3 package.
The operating temperature range for the NTE2395 is -55°C to 175°C (TJ).
The NTE2395 is listed as RoHS3 Compliant.