| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTE2392 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor from NTE Electronics, designed for high-speed switching applications. It features a drain-source voltage of 100V and a continuous drain current of 40A at 25°C, derating to 25A at 100°C. The device has a maximum power dissipation of 150W at 25°C.
With a low static drain-source on-resistance of 55mOhm at 20A and 10V, and a gate threshold voltage of 4V maximum, the NTE2392 is suitable for applications such as switching mode power supplies, uninterruptible power supplies, and motor speed control. Its TO-3 package is designed for through-hole mounting.
Key electrical characteristics include an input capacitance of 3000pF, output capacitance of 1500pF, and reverse transfer capacitance of 500pF. The operating junction temperature range is -55°C to +150°C, with a storage temperature range also from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 40A at 25°C.
The maximum power dissipation is 150W at 25°C.
The package type is TO-3.
The operating temperature range is -55°C to +150°C.
The RoHS status is Compliant.