| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number NTE2390 from NTE Electronics, is designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current of 12A at the case temperature.
The device utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 4.5V at 1mA. Its on-resistance (Rds On) is a maximum of 200mOhm at 6A and 10V gate drive voltage. The input capacitance (Ciss) is 400pF at 25V.
Packaged in a TO-220-3 configuration, the NTE2390 is designed for through-hole mounting. It operates within a temperature range of -65°C to 150°C (TJ) and has a maximum power dissipation of 75W at the case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) of the NTE2390 is 60V.
The NTE2390 can handle a continuous drain current of 12A at the case temperature.
The maximum on-resistance (Rds On) for the NTE2390 is 200mOhm when measured at 6A drain current and 10V gate-source voltage.
The NTE2390 operates within a temperature range of -65°C to 150°C (TJ).
The NTE2390 is supplied in a TO-220-3 package.
The NTE2390 is designed for through-hole mounting.