| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This NTE Electronics NTE2387 is a single N-Channel MOSFET designed for power applications. It offers a high drain-to-source voltage (Vdss) of 800V and can handle a continuous drain current of 4.1A at the case temperature.
The MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-220 package, suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 78 nC maximum at 10V and an input capacitance (Ciss) of 1300 pF maximum at 25V. The on-state resistance (Rds On) is a maximum of 3 Ohms at 1.5A and 10V.
With an operating temperature range of -55°C to 150°C (TJ) and a maximum power dissipation of 125W (Tc), this component is designed for robust performance. The gate-to-source voltage (Vgs) limit is ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA. The drive voltage is specified at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTE2387 is 800 V.
The continuous drain current is 4.1A.
The NTE2387 comes in a TO-220-3 package.
The operating temperature range is -55°C to 150°C (TJ).
The NTE2387 is RoHS3 Compliant.