NTE2385 The NTE2385 is an N-Channel MOSFET from NTE Electronics designed for high-speed switching. It features a 500V drain-to-source voltage and an 8A continuous drain current capability.
Mfr Part #:

NTE2385

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE2385 is an N-Channel MOSFET from NTE Electronics designed for high-speed switching. It features a 500V drain-to-source voltage and an 8A continuous drain current capability.
Total Stock: 2 pcs
$ Price Range: $0.99

NTE2385 Available from 1 distributor

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NTE2385 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTE2385 Description

Short technical summary and product information.

The NTE2385 is an N-Channel, Enhancement Mode MOSFET from NTE Electronics, designed for high-speed switching applications. It offers a breakdown voltage of 500V and a continuous drain current of 8A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 0.85 Ohms at 10V gate-source voltage and 4.8A drain current. The gate threshold voltage is a maximum of 4V at 250µA. It also features a gate-to-source voltage range of ±20V.

 

This MOSFET is housed in a TO-220 package with a through-hole mounting type. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation of 125W at 25°C case temperature. The device is rated for repetitive avalanche and dynamic dv/dt.

 

Features such as ease of paralleling and simple drive requirements make the NTE2385 suitable for various power switching applications.

NTE2385 Quick Information

Product Type: MOSFET
Canonical Name: NTE2385 N-Channel MOSFET
Subcategory: N-Channel

NTE2385 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE2385 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE2385 Features

  • N-Channel, Enhancement Mode MOSFET
  • 500V Drain-to-Source Voltage
  • 8A Continuous Drain Current
  • 0.85 Ohm Max Rds On
  • TO-220 Package, Through Hole Mount

NTE2385 Applications

  • High-voltage power switching circuits
  • Motor control applications
  • Power supply regulation
  • High-voltage relay replacements

NTE2385 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the NTE2385 MOSFET?

The NTE2385 MOSFET has a breakdown voltage of 500V.

What is the continuous drain current for the NTE2385?

The continuous drain current for the NTE2385 is 8A at 25°C case temperature.

What is the Rds On for the NTE2385 MOSFET?

The Rds On for the NTE2385 is a maximum of 0.85 Ohms at 4.8A drain current and 10V gate-source voltage.

What is the operating temperature range of the NTE2385?

The NTE2385 operates between -55°C and +150°C.

What package type is the NTE2385 MOSFET supplied in?

The NTE2385 MOSFET is supplied in a TO-220 package with through-hole mounting.

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