| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTE2383 is a P-Channel Enhancement Mode MOSFET from NTE Electronics, designed for high voltage and high-speed power switching applications. It is suitable for use in switching regulators, converters, solenoid, and relay drivers.
Key electrical specifications include a drain-source voltage of 100V, a continuous drain current of 10.5A at 25°C, and a maximum on-resistance of 300mOhm at 5.3A and 10V. The device also features a gate threshold voltage of 4V maximum and a gate-source voltage range of ±20V.
This MOSFET offers improved inductive ruggedness, fast switching times, and a rugged polysilicon gate cell structure. It also boasts lower input capacitance and an extended safe operating area, along with improved high-temperature reliability.
The NTE2383 comes in a TO-220 package and is designed for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NTE2383 MOSFET is 100V.
The continuous drain current for the NTE2383 MOSFET is 10.5A at 25°C.
The operating junction temperature range for the NTE2383 MOSFET is -55°C to +150°C.
The NTE2383 MOSFET is supplied in a TO-220 package.
The maximum on-resistance (Rds On) for the NTE2383 MOSFET is 300mOhm at 5.3A and 10V.
The gate threshold voltage (Vgs(th)) for the NTE2383 MOSFET is a maximum of 4V at 250µA.