NTE2376 The NTE Electronics NTE2376 is an N-Channel MOSFET with a 200V drain-to-source breakdown voltage and a continuous drain current of 30A. It is housed in a TO-247 package.
Mfr Part #:

NTE2376

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE Electronics NTE2376 is an N-Channel MOSFET with a 200V drain-to-source breakdown voltage and a continuous drain current of 30A. It is housed in a TO-247 package.
Total Stock: 2 pcs
$ Price Range: $0.99

NTE2376 Available from 1 distributor

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NTE2376 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTE2376 Description

Short technical summary and product information.

This N-Channel MOSFET from NTE Electronics, part number NTE2376, is designed for high-speed switching applications. It features a drain-to-source breakdown voltage of 200V and can handle a continuous drain current of up to 30A at 25°C.

 

The device has a low static drain-to-source on-resistance of 85mOhm at 18A and 10V gate-source voltage, contributing to efficient power handling with a maximum power dissipation of 190W at 25°C.

 

Key electrical characteristics include a gate threshold voltage of 4V maximum and a total gate charge of 140nC. The operating junction temperature range is from -55°C to +150°C.

 

The NTE2376 is supplied in a TO-247 package with through-hole mounting. It also offers features like dynamic dv/dt rating, repetitive avalanche rating, and ease of paralleling, making it suitable for various power electronics designs.

NTE2376 Quick Information

Product Type: MOSFET
Canonical Name: NTE Electronics NTE2376 N-Channel MOSFET
Subcategory: N-Channel

NTE2376 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE2376 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE2376 Features

  • N-Channel MOSFET for high-speed switching.
  • 200V drain-to-source breakdown voltage.
  • 30A continuous drain current capability.
  • Low 85mOhm Rds On at 10V gate drive.
  • TO-247 package with through-hole mounting.

NTE2376 Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for high-speed switching.
  • Applicable in power management systems.

NTE2376 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the NTE2376 MOSFET?

The maximum continuous drain current for the NTE2376 MOSFET is 30A at 25°C case temperature.

What is the drain-to-source breakdown voltage of the NTE2376?

The drain-to-source breakdown voltage (Vdss) for the NTE2376 is 200V.

What is the Rds On for the NTE2376 at specified conditions?

The Rds On for the NTE2376 is a maximum of 85mOhm when tested at 18A drain current and 10V gate-source voltage.

What is the operating temperature range for the NTE2376?

The operating junction temperature range for the NTE2376 is -55°C to +150°C.

What package type is the NTE2376 MOSFET supplied in?

The NTE2376 MOSFET is supplied in a TO-247-3 package.

What is the RoHS status of the NTE2376?

The RoHS status of the NTE2376 is RoHS3 Compliant.

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