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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2372 is a P-Channel MOSFET from NTE Electronics, designed for high-speed switching applications. It features a 200V drain-to-source breakdown voltage and can handle a continuous drain current of up to 3.5A at 25°C.
Key electrical characteristics include a low static drain-to-source on-resistance of 1.5 Ohms at 1.5A and 10V gate-to-source voltage. The gate threshold voltage is typically between 2V and 4V. With a gate charge of 22 nC, it is suitable for applications requiring fast switching.
This MOSFET is housed in a TO-220 package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to +150°C, making it robust for various environmental conditions. The device also offers a peak diode recovery dv/dt rating of 5.0V/ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) of the NTE2372 MOSFET is 200V.
The NTE2372 MOSFET has a continuous drain current of 3.5A at 25°C.
The Rds(on) for the NTE2372 MOSFET is a maximum of 1.5 Ohm at 1.5A and 10V.
The NTE2372 MOSFET operates between -55°C and +150°C.
The NTE2372 MOSFET is supplied in a TO-220-3 package.