| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE Electronics NTE2370 is a PNP pre-biased bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.
This transistor offers a maximum collector current of 100mA and a collector-emitter voltage rating of 50V. It has a power dissipation capability of 200mW. The DC current gain (hFE) is a minimum of 80 at 10mA and 5V, with a Vce saturation of 300mV maximum at 250µA and 5mA.
It includes an internal resistor of 4.7 kΩ. The transistor operates at frequencies up to 200 MHz. The NTE2370 is housed in a TO-92S package, suitable for through-hole mounting.
This component is ideal for designs requiring a reliable PNP transistor with integrated biasing, simplifying circuit construction and reducing component count.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the NTE2370 is 100mA.
The collector-emitter voltage rating for the NTE2370 is 50V.
The maximum power dissipation for the NTE2370 is 200mW.
The DC current gain (hFE) of the NTE2370 is a minimum of 80 at 10mA and 5V.
The NTE2370 transistor is supplied in a TO-92S package.
The NTE2370 transistor is mounted using the through-hole method.