| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE2369 is a pre-biased NPN bipolar junction transistor (BJT) from NTE Electronics, designed for digital applications. It features integrated bias resistors, simplifying circuit design.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The transistor has a power dissipation rating of 300mW. Its DC current gain (hFE) is a minimum of 80 at 10mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 300mV at 250µA base current and 5mA collector current. The frequency response is characterized by a gain bandwidth product of 250MHz.
This component includes internal resistors of 4.7 kΩ, facilitating its use in various switching and logic circuits. The NTE2369 is housed in a TO-92S package, suitable for through-hole mounting.
This transistor is appropriate for general-purpose amplification and switching applications where a pre-biased NPN device is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2369 transistor has a maximum collector-emitter voltage rating of 50V.
The NTE2369 can handle a maximum continuous collector current of 100mA.
The NTE2369 transistor has a maximum power dissipation of 300mW.
The NTE2369 transistor is supplied in a TO-92S package.
The NTE2369 transistor is designed for through-hole mounting.