| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE2367 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by NTE Electronics, Inc. This component is designed for through-hole mounting and comes in a TO-92S package.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 30 at 10mA and 5V, with a Vce saturation of 300mV at 250µA and 5mA. The transistor operates at frequencies up to 250MHz and has a power dissipation rating of 300mW. It includes integrated base and emitter resistors, each with a value of 4.7 kΩ.
This transistor is suitable for various electronic circuits requiring a pre-biased NPN configuration. Its through-hole mounting makes it convenient for breadboarding and traditional PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum collector current is 100mA.
The minimum DC current gain (hFE) is 30 at 10mA and 5V.
The NTE2367 is available in a TO-92S package.
The NTE2367 transistor is designed for through-hole mounting.