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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE Electronics NTE2366 is a PNP bipolar junction transistor (BJT) suitable for electronic circuits requiring amplification or switching. This component features a maximum collector-emitter voltage of 300V and a maximum collector current of 100mA.
With a frequency rating of 150MHz, the NTE2366 is capable of operating in moderate frequency applications. It has a DC current gain (hFE) of 40 at 10mA and 10V, and a saturation voltage (Vce) of 600mV at 2mA and 20mA.
The transistor is housed in a TO-92L package, which is a common through-hole form factor. It operates within a temperature range of -55°C to 150°C (TJ). The NTE2366 is specified with RoHS3 compliance and an MSL 1 rating.
This device is designed for applications where a PNP transistor with these specific electrical characteristics and packaging is required. Its specifications make it a candidate for use in signal amplification and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the NTE2366 is 300V.
The NTE2366 transistor has a maximum collector current of 100mA.
The NTE2366 operates within a temperature range of -55°C to 150°C.
The NTE2366 is supplied in a TO-92L package, specifically TO-226-3, TO-92-3 Long Body, for through-hole mounting.
The NTE2366 transistor has a frequency rating of 150MHz.