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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics NTE2365 is a silicon NPN transistor specifically designed for high-voltage horizontal deflection output stages. It features a high breakdown voltage of 800V (VCEO) and a maximum collector current of 15A continuous, with a peak capability of 30A.
This transistor is built for high reliability and high speed, with a typical fall time of 0.1µs. Its absolute maximum ratings include a Collector to Base Voltage (VCBO) of 1500V and a Collector Dissipation (PC) of 180W. The junction temperature can reach up to 150°C.
Packaged in a TO-3PBL (TO-3P-3 Full Pack) through-hole configuration, the NTE2365 is suitable for applications requiring robust performance in demanding environments. Its electrical characteristics include a minimum DC current gain (hFE) of 8 at 1A and 5V, and a Vce(sat) of 5V at 10A and 2.5A base current.
Key electrical parameters include a Collector Sustaining Voltage (VCEO(sus)) of 800V and various cutoff current specifications. The operating temperature range is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE2365 is 800V.
The NTE2365 transistor has a continuous collector current (IC) rating of 12A.
The NTE2365 transistor is supplied in a TO-3PBL package, which is a TO-3P-3 Full Pack type for through-hole mounting.
The maximum operating junction temperature (TJ) for the NTE2365 is 150°C.
The minimum DC Current Gain (hFE) for the NTE2365 at 1A and 5V is 8.