NTE2365 The NTE Electronics NTE2365 is a high-voltage NPN silicon transistor designed for horizontal deflection output applications. It offers a high breakdown voltage and significant current handling capabilities.
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NTE2365

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Mfr Name: NTE Electronics
NTE Electronics
The NTE Electronics NTE2365 is a high-voltage NPN silicon transistor designed for horizontal deflection output applications. It offers a high breakdown voltage and significant current handling capabilities.
✓ Total Stock: 2 pcs
$ Price Range: $0.99

NTE2365 Available from 1 distributor

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NTE2365 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Junction Temperature
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NTE2365 Description

Short technical summary and product information.

The NTE Electronics NTE2365 is a silicon NPN transistor specifically designed for high-voltage horizontal deflection output stages. It features a high breakdown voltage of 800V (VCEO) and a maximum collector current of 15A continuous, with a peak capability of 30A.

 

This transistor is built for high reliability and high speed, with a typical fall time of 0.1µs. Its absolute maximum ratings include a Collector to Base Voltage (VCBO) of 1500V and a Collector Dissipation (PC) of 180W. The junction temperature can reach up to 150°C.

 

Packaged in a TO-3PBL (TO-3P-3 Full Pack) through-hole configuration, the NTE2365 is suitable for applications requiring robust performance in demanding environments. Its electrical characteristics include a minimum DC current gain (hFE) of 8 at 1A and 5V, and a Vce(sat) of 5V at 10A and 2.5A base current.

 

Key electrical parameters include a Collector Sustaining Voltage (VCEO(sus)) of 800V and various cutoff current specifications. The operating temperature range is from -55°C to +150°C.

NTE2365 Quick Information

Product Type: Bipolar Transistor
Canonical Name: NTE Electronics NTE2365 Silicon NPN Transistor
Subcategory: Single

NTE2365 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE2365 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE2365 Features

  • High voltage NPN silicon transistor.
  • 800V Collector-Emitter Voltage rating.
  • 15A continuous collector current.
  • 180W power dissipation.
  • TO-3PBL through-hole package.

NTE2365 Applications

  • High-voltage power switching circuits
  • Industrial motor control modules
  • Power supply regulation
  • High-voltage amplification

NTE2365 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NTE2365?

The maximum collector-emitter voltage (VCEO) for the NTE2365 is 800V.

What is the continuous collector current rating of the NTE2365 transistor?

The NTE2365 transistor has a continuous collector current (IC) rating of 12A.

What is the package type for the NTE2365 transistor?

The NTE2365 transistor is supplied in a TO-3PBL package, which is a TO-3P-3 Full Pack type for through-hole mounting.

What is the maximum operating junction temperature for the NTE2365?

The maximum operating junction temperature (TJ) for the NTE2365 is 150°C.

What is the DC Current Gain (hFE) of the NTE2365 at 1A and 5V?

The minimum DC Current Gain (hFE) for the NTE2365 at 1A and 5V is 8.

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