| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE2358 is a PNP silicon transistor from NTE Electronics, featuring integrated pre-bias resistance. This component is designed for through-hole mounting and comes in a TO-92S package, also referred to as TO-226-3 or TO-92-3 Short Body.
Key electrical characteristics include a maximum voltage rating of 50V and a current handling capability of 100mA. The transistor offers a minimum DC current gain (hFE) of 50 at 5mA and 5V. Its saturation voltage (Vce Sat) is a maximum of 300mV at 500µA and 10mA. The integrated resistor has a value of 22 kΩ.
With a power dissipation rating of 300mW and a frequency response up to 200 MHz, the NTE2358 is suitable for various general-purpose amplification and switching applications. The pre-biased configuration simplifies circuit design by reducing the need for external biasing components.
This device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is not sensitive to moisture and has unlimited shelf life under recommended storage conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2358 transistor has a voltage rating of 50V.
The NTE2358 can handle a current of 100 mA.
The power dissipation for the NTE2358 is 300 mW.
The integrated resistor in the NTE2358 has a value of 22 kΩ.
The NTE2358 is supplied in a TO-226-3, TO-92-3 Short Body package, also known as TO-92S.
The NTE2358 transistor is designed for through-hole mounting.