| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE2357 is a pre-biased NPN silicon transistor manufactured by NTE Electronics. It is designed for through-hole mounting and comes in a TO-92S package.
Key electrical specifications include a collector-emitter voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The transistor features a minimum DC current gain (hFE) of 50 at 5mA collector current and 5V Vce. The saturation voltage (Vce Sat) is a maximum of 300mV at 500µA base current and 10mA collector current.
This component includes an integrated 22 kΩ resistor. The mounting type is through hole, and the package is TO-226-3, TO-92-3 Short Body.
The NTE2357 is suitable for various electronic applications requiring a pre-biased NPN transistor with integrated resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50V.
The continuous collector current is 100mA.
The minimum DC current gain (hFE) is 50 at 5mA collector current and 5V Vce.
The Vce saturation is a maximum of 300mV at 500µA base current and 10mA collector current.
The NTE2357 includes a 22 kΩ resistor.
The NTE2357 is available in a TO-226-3, TO-92-3 Short Body package, also referred to as TO-92S.
The NTE2357 is designed for through-hole mounting.