| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE Electronics NTE2356 is a PNP - Pre-Biased bipolar junction transistor (BJT) designed for through-hole mounting. It offers a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 100mA.
This transistor includes an integrated base resistor of 10 kΩ and has a power dissipation rating of 300 mW. The DC current gain (hFE) is a minimum of 50 at 10mA and 5V, with a Vce saturation of 300mV maximum at 500µA collector current and 10mA base current. It operates at frequencies up to 200 MHz.
The NTE2356 comes in a TO-92S package, specifically a TO-226-3, TO-92-3 Short Body configuration, suitable for through-hole applications. Its RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum collector current is 100mA.
The power dissipation rating is 300mW.
The integrated base resistor value is 10 kΩ.
The package type is TO-92S, specifically TO-226-3, TO-92-3 Short Body.