| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics NTE2353 is a silicon NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is manufactured by NTE Electronics and comes in a TO-3PML package for through-hole mounting.
Key electrical specifications include a maximum collector current of 10A and a collector-emitter voltage of 800V. The transistor also offers a maximum power dissipation of 70W and a collector emitter saturation voltage of 5V at 1.6A and 8A.
Operating temperature ranges from -55°C to 150°C, making it suitable for a wide range of environmental conditions. The NTE2353 has a DC current gain (hFE) minimum of 8 at 1A and 5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the NTE2353 is 10A.
The collector-emitter voltage of the NTE2353 is 800V.
The maximum power dissipation for the NTE2353 is 70W.
The operating temperature range for the NTE2353 is -55°C to 150°C.
The NTE2353 is a silicon NPN transistor.
The NTE2353 is mounted using the through-hole method.