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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2349 is a silicon NPN Darlington transistor manufactured by NTE Electronics. It is designed for high current, general purpose amplifier applications. This transistor is housed in a TO-3 package, also known as TO-204AA, and is suitable for through-hole mounting.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 120V and a continuous Collector Current (IC) of 50A. It offers a high DC Current Gain (hFE) of 1000 minimum at 25A and 5V, and 400 minimum at 50A and 5V. The maximum power dissipation (PD) is rated at 300W at 25°C case temperature.
With a wide operating junction temperature range from -55°C to +200°C, the NTE2349 is built for demanding environments. It also features built-in base-emitter shunt resistor and diode protection to rated IC. The thermal resistance from junction to case (RthJC) is 0.584°C/W, indicating efficient heat dissipation.
This transistor is suitable for various general-purpose amplifier designs where high current handling and gain are required. Its monolithic construction ensures reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the NTE2349 is 120V.
The NTE2349 has a continuous Collector Current (IC) rating of 50A.
The NTE2349 transistor has a maximum power dissipation of 300W at 25°C.
The operating junction temperature range for the NTE2349 is -55°C to +200°C.
The NTE2349 transistor is supplied in a TO-3 package.
The DC Current Gain (hFE) of the NTE2349 is a minimum of 1000 at 25A and 5V.
The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 3.5V at 500mA collector current and 50A collector current.