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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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This NTE2345 is an NPN Darlington transistor manufactured by NTE Electronics, suitable for through-hole mounting. It features a high DC current gain (hFE) of 750 at 3A and a low saturation voltage of 2V at 12mA and 3A.
The transistor is rated for a maximum collector-emitter voltage of 120V and a continuous collector current of 6A, with a power dissipation capability of 60W. It operates within a junction temperature range of up to 150°C.
The component comes in a SOT-82 package, making it suitable for applications requiring robust power handling in a compact form factor. Its through-hole design facilitates easy integration into printed circuit boards for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the NTE2345 is 120V.
The NTE2345 transistor can handle a maximum collector current of 6A.
The DC current gain (hFE) of the NTE2345 is a minimum of 750 at 3A collector current and 3V collector-emitter voltage.
The NTE2345 operates at a maximum junction temperature of 150°C.
The NTE2345 is available in the SOT-82 package.
The NTE2345 transistor is designed for through-hole mounting.