| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Features | |
| SVHC Present | |
| Transistor Type |
The NTE Electronics NTE2336 is a silicon NPN transistor configured in a Darlington arrangement. This component includes an internal damper and a Zener diode, enhancing its switching capabilities and protection.
As a single bipolar junction transistor (BJT), the NTE2336 is designed for various switching applications. Its construction as a Darlington pair provides high current gain, making it suitable for applications requiring amplification or switching of moderate to high currents.
The component is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is not sensitive to moisture and can be handled without special precautions. Further details on its electrical characteristics, such as collector current, collector-emitter voltage, and power dissipation, would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2336 is a silicon NPN transistor in a Darlington configuration.
The NTE2336 features an internal damper and a Zener diode, along with the high gain characteristic of a Darlington pair.
Yes, the NTE2336 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NTE2336 is 1.