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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2333 is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. It is designed for through-hole mounting in a TO-220 package.
This transistor features a maximum collector-emitter voltage (Vce) of 450V and a continuous collector current (Ic) of 6A. It can dissipate up to 100W of power. The DC current gain (hFE) is a minimum of 14 at 500mA and 5V, with a Vce saturation of 700mV maximum at 600mA and 3A.
Operating at a maximum junction temperature of 150°C, the NTE2333 has a frequency response up to 14MHz. Its RoHS status is compliant, and it is classified under Moisture Sensitivity Level 1 (MSL 1).
Ideal for general-purpose amplification and switching applications where high voltage and current handling are required, the NTE2333 is suitable for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2333 transistor has a maximum voltage rating of 450V.
The NTE2333 transistor can handle a continuous current of 6A.
The NTE2333 transistor has a power dissipation rating of 100W.
The NTE2333 transistor operates at a maximum junction temperature of 150°C.
The NTE2333 is available in a TO-220-3 package.
The NTE2333 transistor is designed for through-hole mounting.