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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar transistor, part number NTE2330 from NTE Electronics, is designed for through-hole mounting. It features a maximum collector-emitter voltage of 55V and a continuous collector current of 4A. The device can dissipate up to 80W of power and operates at junction temperatures up to 150°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 500 at 500mA and 5V. The saturation voltage (Vce) is a maximum of 3V at 20mA and 1A. The transistor is supplied in a TO-3P package.
This component is suitable for various general-purpose amplification and switching applications where its power and current ratings are appropriate. The through-hole mounting facilitates integration into traditional PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the NTE2330 is 55V.
The NTE2330 has a continuous collector current rating of 4A.
The NTE2330 transistor has a power dissipation rating of 80W.
The NTE2330 operates at junction temperatures up to 150°C.
The NTE2330 is supplied in a TO-3P package.
The NTE2330 transistor is designed for through-hole mounting.