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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The NTE233 is a single NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for through-hole mounting and comes in a standard TO-92 package (TO-226-3, TO-92-3).
Key electrical characteristics include a maximum collector-emitter voltage of 30V and a continuous collector current of 100mA. The transistor offers a DC current gain (hFE) of at least 20 at 10mA and 10V, with a Vce saturation of 600mV maximum at 100µA base current and 20mA collector current. Its transition frequency is rated at 700MHz, and it can dissipate up to 625mW of power. The operating junction temperature range is up to 150°C.
This transistor is suitable for various general-purpose amplification and switching applications where its specifications meet the design requirements. The through-hole mounting makes it easy to integrate into breadboard or PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the NTE233 is 30V.
The NTE233 can handle a maximum continuous collector current of 100mA.
The minimum DC current gain (hFE) for the NTE233 is 20 at 10mA collector current and 10V collector-emitter voltage.
The NTE233 is available in a TO-92 package, specifically TO-226-3, TO-92-3 (TO-226AA).
The NTE233 is designed for through-hole mounting.
The NTE233 has an operating junction temperature range of up to 150°C.