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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2328 is a silicon NPN bipolar junction transistor (BJT) manufactured by NTE Electronics. This component is designed for through-hole mounting and comes in a TO-3PBL package. It features a maximum collector current of 15A and a collector-base voltage rating of 200V. The transistor has a maximum power dissipation of 150W and an operating temperature range from -55°C to 150°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 55 at 1A and 5V, and a maximum collector-emitter saturation voltage of 3V at 1A and 10A. The device operates at frequencies up to 25MHz.
This transistor is suitable for various power switching and amplification applications where high current and voltage handling are required. Its through-hole mounting makes it suitable for traditional PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the NTE2328 transistor is 15A.
The collector-base voltage rating for the NTE2328 is 200V.
The NTE2328 has a maximum power dissipation of 150W.
The NTE2328 operates between -55°C and 150°C.
The NTE2328 transistor is designed for through-hole mounting.
The NTE2328 is supplied in a TO-3PBL package.