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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector-Emitter Voltage (Peak) | |
| Collector-Emitter Voltage (Sustaining) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Fall Time | |
| Frequency | |
| IB (Maximum) | |
| IC (Maximum @ tp = 2 ms) | |
| IC (Maximum) | |
| ICES (Maximum @ VCEM = 1000 V, VBE = 0) | |
| ICES (Maximum @ VCEM = 1000 V, VBE = 0, TJ = +125 °C) | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Power | |
| Reverse Base Current (Peak) | |
| Storage Temperature Range | |
| Storage Time | |
| Supplier Device Package | |
| Thermal Resistance Junction to Mounting Base | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Turn On Time | |
| VCE(sat) (Maximum @ IC = 0.1 A, IB = 10 mA) | |
| VCE(sat) (Maximum @ IC = 0.2 A, IB = 20 mA) | |
| VCEO (Maximum @ Open base) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| fT (Typical @ IC = 50 mA, VCE = 10 V, f = 1 MHz) | |
| hFE (Minimum/Typical @ IC = 50 mA, VCE = 5 V) |
The NTE2327 is a silicon NPN transistor housed in a TO-126 package, engineered for demanding applications such as converters, inverters, switching regulators, and motor control systems.
This transistor boasts a high collector-emitter voltage rating of 450V (VCEO) and a peak voltage rating (VCESM) of 1000V. It can handle a continuous collector current of 0.5A, with a peak current capability of 1A for short durations. The device offers a typical DC current gain (hFE) of 50 at 50mA and 5V.
With a transition frequency (fT) of 20MHz and fast switching times (turn-on time of 0.25µs, storage time of 2.0µs, and fall time of 0.4µs), the NTE2327 is suitable for high-speed switching circuits. It operates at junction temperatures up to 150°C and has a total power dissipation of 20W.
The transistor is designed for through-hole mounting and comes in a TO-126 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2327 transistor has a maximum collector-emitter voltage (VCEO) of 450V.
The NTE2327 transistor has a continuous collector current (IC) rating of 0.5A.
The NTE2327 transistor can operate at junction temperatures up to 150°C.
The NTE2327 transistor is supplied in a TO-126 package.
The NTE2327 transistor is designed for through-hole mounting.