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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics NTE2322 is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum collector-emitter voltage of 40V and can handle a continuous collector current of up to 600mA. The transistor has a power dissipation rating of 650mW and a gain-bandwidth product of 200MHz.
Designed for through-hole mounting, the NTE2322 comes in a standard 14-DIP package. Its operating temperature range is from -55°C to 125°C. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 1.6V at 30mA and 300mA.
This component is RoHS3 compliant and has an MSL rating of 1 Unlimited. Its through-hole package and electrical specifications make it suitable for general-purpose amplification and switching applications where a PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NTE2322 transistor has a maximum collector-emitter voltage rating of 40V.
The NTE2322 can handle a continuous collector current of up to 600mA.
The operating temperature range for the NTE2322 is -55°C to 125°C.
The NTE2322 is available in a 14-DIP package.
The NTE2322 is designed for through-hole mounting.