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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE Electronics NTE2320 is a silicon NPN bipolar junction transistor (BJT) suitable for general-purpose switching and amplification applications. It is rated for a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 500mA. The transistor has a power dissipation of 1.25W and a transition frequency (fT) of 350MHz.
This component is housed in a 14-lead DIP (Dual In-line Package) with a 0.300-inch (7.62mm) lead spacing, designed for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ). Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a maximum saturation voltage (VCE(sat)) of 1.4V at 30mA and 300mA.
The NTE2320 is specified as RoHS3 Compliant, with an MSL of 1, and REACH Unaffected. These compliance statuses are based on available data and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE2320 is 30V.
The NTE2320 can handle a continuous collector current of 500mA.
The NTE2320 operates between -55°C and 150°C.
The NTE2320 is supplied in a 14-DIP package.
The NTE2320 is designed for through-hole mounting.