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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The NTE Electronics NTE232 is a PNP Darlington bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 30V and can handle a continuous collector current of up to 300mA. The transistor is characterized by a high DC current gain (hFE) of 50000 minimum at 10mA and 5V, making it suitable for amplification tasks.
This device operates within a temperature range of -55°C to 150°C (TJ). The NTE232 comes in a TO-92 package, a common through-hole component package, facilitating easy integration into printed circuit boards. Its saturation voltage (Vce) is a maximum of 1.5V at 100µA collector current and 100mA base current. The transistor has a transition frequency of 125MHz.
Key electrical characteristics include a power dissipation rating of 625mW. The PNP Darlington configuration provides high current gain and input impedance. This component is often used in switching and amplification circuits where high gain is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to 150°C (TJ).
The maximum collector current is 300 mA.
The NTE232 is supplied in a TO-92 package.
The minimum DC current gain (hFE) is 50000 at 10mA collector current and 5V collector-emitter voltage.