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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2318 is a silicon NPN transistor manufactured by NTE Electronics, suitable for high voltage and high-speed switching applications. It is housed in a TO-218 package, facilitating through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage of 700V and a continuous collector current of 8A. The transistor offers a power dissipation of 125W and a minimum DC current gain (hFE) of 2.25 at 4.5A and 5V. Its Vce saturation is a maximum of 1V at 2A collector current and 2A base current. The frequency response is up to 7MHz.
Operating temperature ranges from -65°C to 150°C (TJ). The component also exhibits an output capacitance of 125pF and a current-gain bandwidth product of 7MHz. Switching characteristics include a typical storage time of 8µs and a typical fall time of 0.5µs under specific test conditions.
This transistor is designed for applications requiring robust high-voltage switching capabilities. Its through-hole mounting type makes it suitable for various circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the NTE2318 is 700V.
The NTE2318 can handle a maximum continuous collector current of 8A.
The operating temperature range for the NTE2318 is -65°C to 150°C (TJ).
The NTE2318 is supplied in a TO-218-3 package.
The NTE2318 transistor is mounted using the through-hole method.
The typical output capacitance of the NTE2318 is 125pF.
The typical fall time for the NTE2318 is 0.5µs.