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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2315 is a bipolar junction transistor (BJT) manufactured by NTE Electronics. It features a collector-emitter voltage (VCEO) of 200V and a collector current (IC) of 8A. Designed as a Darlington NPN transistor, it provides high current gain and is suitable for switching and amplification applications.
This transistor comes in a TO220 package, which is suitable for through-hole mounting on printed circuit boards. Its thermal characteristics include a total power dissipation of 60W and a junction operating temperature up to 150°C. The device is used in various electronic circuits requiring high voltage and current handling capabilities.
The NTE2315's electrical specifications include a maximum collector-emitter voltage of 200V, a maximum collector current of 8A, and a maximum base current of 2A. It also features a high DC current gain of approximately 3500, making it suitable for high-gain applications. The device's thermal resistance junction-to-case is 2.08°C/W, and junction-to-ambient is 70°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) of the NTE2315 is 200V.
The maximum collector current (IC) is 8A.
The NTE2315 comes in a TO220 package.
The maximum operating junction temperature is 150°C.