| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NTE2314 is a silicon PNP transistor housed in a TO-3P package, suitable for general high-current switching applications such as relay drivers, inverters, and converters.
Key electrical characteristics include a maximum collector-emitter voltage of 50V and a continuous collector current of 15A. The transistor offers a DC current gain (hFE) ranging from 100 to 200 at 1A and 2V, with a collector-emitter saturation voltage of 500mV maximum at 8A and 400mA base current. Its current gain-bandwidth product (fT) is 20MHz.
With a maximum allowable collector dissipation of 90W at 25°C, the NTE2314 operates within a junction temperature range of -55°C to +150°C. The transistor is designed for through-hole mounting.
Typical applications include relay drivers, high-speed inverters, and converters. Its features include low collector-emitter saturation voltage and wide ASO (Area of Safe Operation).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NTE2314 is 50V.
The NTE2314 has a continuous collector current (IC) rating of 15A.
The allowable collector dissipation (PC) for the NTE2314 at 25°C is 90W.
The minimum DC current gain (hFE) for the NTE2314 at 1A and 2V is 100.
The maximum collector-emitter saturation voltage (VCE(sat)) for the NTE2314 is 500mV at 8A collector current and 400mA base current.
The operating junction temperature (TJ) for the NTE2314 is up to +150°C.
The NTE2314 is a PNP silicon bipolar junction transistor.