NTE2312 The NTE2312 is a silicon NPN transistor from NTE Electronics designed for high-voltage, high-speed power switching. It features a 400V collector-emitter voltage and an 8A continuous collector current in a TO-220 package.
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NTE2312

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE2312 is a silicon NPN transistor from NTE Electronics designed for high-voltage, high-speed power switching. It features a 400V collector-emitter voltage and an 8A continuous collector current in a TO-220 package.
Total Stock: 4 pcs
$ Price Range: $0.99

NTE2312 Available from 1 distributor

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NTE2312 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current
Collector Cutoff Current
Collector Emitter Voltage (Maximum)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Current
Emitter-Base Voltage
Frequency
Mounting Type
Operating Temperature
Power
Power - Max
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Storage Temperature
Supplier Device Package
Thermal Resistance
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Collector Emitter Breakdown

NTE2312 Description

Short technical summary and product information.

The NTE2312 is a silicon NPN transistor manufactured by NTE Electronics, Inc. It is designed for high-voltage, high-speed power switching applications, particularly in inductive circuits where fall time is critical. This transistor is suitable for 115V and 220V switch-mode applications, including switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits.

 

Key electrical specifications include a collector-emitter breakdown voltage of 400V and a continuous collector current of 8A. It also offers a peak collector current of 16A and a continuous base current of 4A. The transistor operates within a junction temperature range of -65°C to +150°C.

 

Packaged in a TO-220 type case, the NTE2312 is designed for through-hole mounting. It has a maximum power dissipation of 2W at an ambient temperature of +25°C and 80W at a case temperature of +25°C. The thermal resistance from junction to case is 1.56°C/W, and from junction to ambient is 62.5°C/W.

NTE2312 Quick Information

Product Type: NPN Transistor
Canonical Name: NTE2312 Silicon NPN Transistor
Subcategory: Bipolar (BJT) - Single

NTE2312 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTE2312 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTE2312 Features

  • High voltage NPN transistor.
  • Designed for high-speed switching.
  • 400V collector-emitter voltage.
  • 8A continuous collector current.
  • TO-220 package for through-hole mounting.

NTE2312 Applications

  • Suitable for switch-mode applications.
  • Used in switching regulators.
  • Ideal for inverters.
  • Applicable for motor controls.
  • Used as solenoid/relay drivers.

NTE2312 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NTE2312?

The maximum collector-emitter voltage (VCEO(sus)) for the NTE2312 is 400V.

What is the continuous collector current rating of the NTE2312 transistor?

The NTE2312 transistor has a continuous collector current rating of 8A.

What is the operating temperature range for the NTE2312?

The operating temperature range for the NTE2312 is -65°C to +150°C.

What package type is the NTE2312 supplied in?

The NTE2312 is supplied in a TO-220-3 package.

What is the minimum DC current gain (hFE) for the NTE2312 at 2A collector current and 5V Vce?

The minimum DC current gain (hFE) for the NTE2312 at 2A collector current and 5V Vce is 8.

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